A5G21H605W19N | 2110-2200 MHz, 85 W Avg, 48 V

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This 85 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2110 to 2200 MHz.

This part is characterized and performance is guaranteed for applications operating in the 2110 to 2200 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.

Data Sheet

Application Notes

Product Details

Features

High terminal impedances for optimal broadband performance
Advanced high performance in-package Doherty
Improved linearized error vector magnitude with next generation signal
Able to withstand extremely high output VSWR and broadband operating conditions
Plastic package
RoHS compliant

RF Performance Table

2100 MHz

Typical Doherty Single−Carrier W−CDMA Reference Circuit Performance: V_DD = 48 Vdc, I_DQA = 300 mA, V_GSB = –5.0 Vdc, P_out = 85 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.⁽¹⁾

Frequency	G_ps (dB)	η_D (%)	Output PAR (dB)	ACPR (dBc)
2110 MHz	16.3	56.1	8.9	–26.3
2140 MHz	16.5	57.6	8.6	–27.3
2170 MHz	16.2	57.1	8.2	–28.9

1. All data measured with device soldered to NXP reference circuit.

Buy/Parametrics

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Documentation

Quick reference to our documentation types.

4 documents

Compact List

Thermal Characterization Methodology of RF Power Amplifiers - Application Note[AN1955]

PDFJul 11, 2024Rev 2
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages[AN1907]

PDFMay 13, 2009Rev 3

A5G21H605W19N 2110–2200 MHz, 85 W Avg, 48 V Data Sheet[A5G21H605W19N]

PDFDec 21, 2023Rev 1

RF High Power GaN Solutions for 5G Infrastructure - Fact Sheet[MACROGANFS]

PDFMay 16, 2024Rev 0

Design Resources

Design Files

Quick reference to our design files types.

1-5of 6 design files

Receive the full breakdown. See the product footprint and more in the eCad file.

Models
A5G21H605W19N Peaking Class AB S-Parameters

S2PRev 0Aug 7, 2023 20:46:0044.8 KBA5G21H605W19N-Peaking-Class-AB

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Models
A5G21H605W19N Peaking Class C S-Parameters

S2PRev 0Aug 7, 2023 20:46:0044.9 KBA5G21H605W19N-Peaking-Class-C

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Models
A5G21H605W19N Carrier Class AB S-Parameters

S2PRev 0Aug 7, 2023 20:46:0044.6 KBA5G21H605W19N-Carrier-Class-AB

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Printed Circuit Boards and Schematics
A5G21H605W19N 1800 MHz PCB DXF file

ZIPRev 0Aug 7, 2023 20:42:002.3 MBA5G21H605W19N-2100-PCB

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Design Files - miscellaneous
A5G21H605W19N 2110-2200 MHz Design Files

ZIPRev 0Apr 5, 2023 14:08:005.7 MBA5G21H605W19N-2110-2200-DESIGN-FILES

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Design Files - miscellaneous
A5G21H605W19N 2110-2170 MHz Design Files

ZIPRev 0Apr 5, 2023 13:58:005.5 MBA5G21H605W19N-2110-2170-DESIGN-FILES

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Show All

2110-2200 MHz, 85 W Avg., 48 V Airfast^® RF Power GaN Transistor

Product Details

Features

RF Performance Table

2100 MHz

Buy/Parametrics

Documentation

Filter by

Application Note (2)

Thermal Characterization Methodology of RF Power Amplifiers - Application Note[AN1955]

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages[AN1907]

Data Sheet (1)

A5G21H605W19N 2110–2200 MHz, 85 W Avg, 48 V Data Sheet[A5G21H605W19N]

Fact Sheet (1)

RF High Power GaN Solutions for 5G Infrastructure - Fact Sheet[MACROGANFS]

A5G21H605W19N 2110–2200 MHz, 85 W Avg, 48 V Data Sheet

Thermal Characterization Methodology of RF Power Amplifiers - Application Note

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages

RF High Power GaN Solutions for 5G Infrastructure - Fact Sheet

Design Resources

Design Files

Filter by

A5G21H605W19N Peaking Class AB S-Parameters

A5G21H605W19N Peaking Class C S-Parameters

A5G21H605W19N Carrier Class AB S-Parameters

A5G21H605W19N 1800 MHz PCB DXF file

A5G21H605W19N 2110-2200 MHz Design Files

A5G21H605W19N 2110-2170 MHz Design Files

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Support

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2110-2200 MHz, 85 W Avg., 48 V Airfast® RF Power GaN Transistor

Product Details

Features

RF Performance Table

2100 MHz

Buy/Parametrics

Documentation

Filter by

Application Note (2)

Thermal Characterization Methodology of RF Power Amplifiers - Application Note[AN1955]

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages[AN1907]

Data Sheet (1)

A5G21H605W19N 2110–2200 MHz, 85 W Avg, 48 V Data Sheet[A5G21H605W19N]

Fact Sheet (1)

RF High Power GaN Solutions for 5G Infrastructure - Fact Sheet[MACROGANFS]

A5G21H605W19N 2110–2200 MHz, 85 W Avg, 48 V Data Sheet

Thermal Characterization Methodology of RF Power Amplifiers - Application Note

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages

RF High Power GaN Solutions for 5G Infrastructure - Fact Sheet

Design Resources

Design Files

Filter by

A5G21H605W19N Peaking Class AB S-Parameters

A5G21H605W19N Peaking Class C S-Parameters

A5G21H605W19N Carrier Class AB S-Parameters

A5G21H605W19N 1800 MHz PCB DXF file

A5G21H605W19N 2110-2200 MHz Design Files

A5G21H605W19N 2110-2170 MHz Design Files

Filter By

Support

What do you need help with?

Suggested Links

2110-2200 MHz, 85 W Avg., 48 V Airfast^® RF Power GaN Transistor