A3T18H400W23S|1805-1880 MHz, 71 W Avg, 28 V

For best experience this site requires Javascript to be enabled. To enable on your browser, follow our accessibility instructions.

The A3T18H400W23S 71 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1880 MHz.

See product image

Data Sheet

Application Notes

Product Details

Features

Advanced high performance in-package Doherty
Designed for wide instantaneous bandwidth applications
Greater negative gate-source voltage range for improved Class C operation
Able to withstand extremely high output VSWR and broadband operating conditions
Designed for digital predistortion error correction systems
RoHS compliant

RF Performance Table

1800 MHz

Typical Doherty Single-Carrier W-CDMA Performance: V_DD = 28 Vdc, I_DQA = 300 mA, V_GSB = 0.7 Vdc, P_out = 71 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency	G_ps (dB)	η_D (%)	Output PAR (dB)	ACPR (dBc)
1805 MHz	17.0	53.2	7.8	–31.0
1840 MHz	17.1	53.4	7.6	–31.6
1880 MHz	16.8	52.8	7.4	–32.5

Buy/Parametrics

‌ ‌ ‌	‌ ‌	‌ ‌	‌ ‌	‌ ‌	‌ ‌
‌ ‌ ‌	‌	‌	‌	‌	‌
‌ ‌ ‌	‌	‌	‌	‌	‌
‌ ‌ ‌	‌	‌	‌	‌	‌
‌ ‌ ‌	‌	‌	‌	‌	‌
‌ ‌ ‌	‌	‌	‌	‌	‌
‌ ‌ ‌	‌	‌	‌	‌	‌
‌ ‌ ‌	‌	‌	‌	‌	‌
‌ ‌ ‌	‌	‌	‌	‌	‌
‌ ‌ ‌	‌	‌	‌	‌	‌
‌ ‌ ‌	‌	‌	‌	‌	‌

Documentation

Quick reference to our documentation types.

4 documents

Compact List

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages[AN1908]

PDFFeb 24, 2011Rev 1

A3T18H400W23S 1805-1880 MHz, 71 W Avg., 28 V Data Sheet[A3T18H400W23S]

PDFOct 26, 2017Rev 0

98ASA00974D, ACP-1230S-4L2S[SOT1800-4]

PDFJun 21, 2017Rev A

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

PDFJan 19, 2004Rev 0

Design Resources

Design Files

Quick reference to our design files types.

4 design files

Receive the full breakdown. See the product footprint and more in the eCad file.

Models
A3T18H400W23S S-Parameters Peaking Class C

S2PRev 0Oct 26, 2017 00:00:0054.8 KBA3T18H400W23S-Peaking-Class-C

Account Required
DownloadToggle Dropdown
- Add to Queue
- Remove from Queue
- Recommended for large file sizes.
- View Queue
Models
A3T18H400W23S S-Parameters Carrier

S2PRev 0Oct 26, 2017 00:00:0054.8 KBA3T18H400W23S-Carrier

Account Required
DownloadToggle Dropdown
- Add to Queue
- Remove from Queue
- Recommended for large file sizes.
- View Queue
Models
A3T18H400W23S S-Parameters Peaking Class AB

S2PRev 0Oct 26, 2017 00:00:0054.8 KBA3T18H400W23S-Peaking-Class-AB

Account Required
DownloadToggle Dropdown
- Add to Queue
- Remove from Queue
- Recommended for large file sizes.
- View Queue
Printed Circuit Boards and Schematics
A3T18H400W23S PCB DXF file

ZIPRev 4Oct 26, 2017 00:00:0016.2 KBA3T18H455W23S-PCB

Account Required
DownloadToggle Dropdown
- Add to Queue
- Remove from Queue
- Recommended for large file sizes.
- View Queue

1805-1880 MHz, 71 W Avg., 28 V Airfast^® RF Power LDMOS Transistor

Product Details

Features

RF Performance Table

1800 MHz

Buy/Parametrics

Documentation

Filter by

Application Note (1)

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages[AN1908]

Data Sheet (1)

A3T18H400W23S 1805-1880 MHz, 71 W Avg., 28 V Data Sheet[A3T18H400W23S]

Package Information (1)

98ASA00974D, ACP-1230S-4L2S[SOT1800-4]

Technical Notes (1)

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

A3T18H400W23S 1805-1880 MHz, 71 W Avg., 28 V Data Sheet

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages

Using Data Sheet Impedances for RF LDMOS Devices

98ASA00974D, ACP-1230S-4L2S

Design Resources

Design Files

Filter by

A3T18H400W23S S-Parameters Peaking Class C

A3T18H400W23S S-Parameters Carrier

A3T18H400W23S S-Parameters Peaking Class AB

A3T18H400W23S PCB DXF file

Filter By

Support

What do you need help with?

Suggested Links

1805-1880 MHz, 71 W Avg., 28 V Airfast® RF Power LDMOS Transistor

Product Details

Features

RF Performance Table

1800 MHz

Buy/Parametrics

Documentation

Filter by

Application Note (1)

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages[AN1908]

Data Sheet (1)

A3T18H400W23S 1805-1880 MHz, 71 W Avg., 28 V Data Sheet[A3T18H400W23S]

Package Information (1)

98ASA00974D, ACP-1230S-4L2S[SOT1800-4]

Technical Notes (1)

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

A3T18H400W23S 1805-1880 MHz, 71 W Avg., 28 V Data Sheet

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages

Using Data Sheet Impedances for RF LDMOS Devices

98ASA00974D, ACP-1230S-4L2S

Design Resources

Design Files

Filter by

A3T18H400W23S S-Parameters Peaking Class C

A3T18H400W23S S-Parameters Carrier

A3T18H400W23S S-Parameters Peaking Class AB

A3T18H400W23S PCB DXF file

Filter By

Support

What do you need help with?

Suggested Links

1805-1880 MHz, 71 W Avg., 28 V Airfast^® RF Power LDMOS Transistor