A5G18H610W19N|1805–1880 MHz, 85 W Avg, 48 V

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This A5G18H610W19N 85 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1880 MHz.

This part is characterized and performance is guaranteed for applications operating in the 1805 to 1880 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.

Data Sheet

Application Notes

Product Details

Features

High terminal impedances for optimal broadband performance
Advanced high performance in-package Doherty
Improved linearized error vector magnitude with next generation signal
Able to withstand extremely high output VSWR and broadband operating conditions
Plastic package
RoHS compliant

RF Performance Table

1800 MHz

Typical Doherty Single-Carrier W-CDMA Reference Circuit Performance: V_DD = 48 Vdc, I_DQA = 300 mA, V_GSB = -5.4 Vdc, P_out = 85 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.⁽¹⁾

Frequency	G_ps (dB)	η_D (%)	Output PAR (dB)	ACPR (dBc)
1805 MHz	17.3	55.8	8.4	–32.3
1840 MHz	17.5	55.6	8.6	–34.7
1880 MHz	17.4	54.1	8.5	–33.7

1. All data measured with device soldered in NXP reference circuit.

Buy/Parametrics

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Documentation

Quick reference to our documentation types.

4 documents

Compact List

Thermal Characterization Methodology of RF Power Amplifiers - Application Note[AN1955]

PDFJul 11, 2024Rev 2
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages[AN1907]

PDFMay 13, 2009Rev 3

A5G18H610W19N 1805–1880 MHz, 85 W Avg, 48 V Data Sheet[A5G18H610W19N]

PDFJan 31, 2025Rev 2.0

RF High Power GaN Solutions for 5G Infrastructure - Fact Sheet[MACROGANFS]

PDFMay 16, 2024Rev 0

Design Resources

Design Files

Quick reference to our design files types.

5 design files

Receive the full breakdown. See the product footprint and more in the eCad file.

Models
A5G18H610W19N Peaking Class C S-Parameters

S2PRev 0Oct 9, 2023 11:00:00127.9 KBA5G18H610W19N-Peaking-Class-C

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Models
A5G18H610W19N Carrier Class AB S-Parameters

S2PRev 0Oct 9, 2023 10:52:00127.9 KBA5G18H610W19N-Carrier-Class-AB

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Models
A5G18H610W19N Peaking Class AB S-Parameters

S2PRev 0Oct 9, 2023 10:56:00127.9 KBA5G18H610W19N-Peaking-Class-AB

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Printed Circuit Boards and Schematics
A5G18H610W19N 1800 MHz PCB DXF file

ZIPRev 0Oct 9, 2023 11:07:00907.7 KBA5G18H610W19N-1800-PCB

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Design Files - miscellaneous
A5G18H610W19N 1805-1880 MHz Design Files

ZIPRev 0Jan 24, 2024 13:31:00850.3 KBA5G18H610W19N-DESIGN-FILES

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1805-1880 MHz, 85 W Avg., 48 V Airfast^® RF Power GaN Transistor

Product Details

Features

RF Performance Table

1800 MHz

Buy/Parametrics

Documentation

Filter by

Application Note (2)

Thermal Characterization Methodology of RF Power Amplifiers - Application Note[AN1955]

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages[AN1907]

Data Sheet (1)

A5G18H610W19N 1805–1880 MHz, 85 W Avg, 48 V Data Sheet[A5G18H610W19N]

Fact Sheet (1)

RF High Power GaN Solutions for 5G Infrastructure - Fact Sheet[MACROGANFS]

A5G18H610W19N 1805–1880 MHz, 85 W Avg, 48 V Data Sheet

Thermal Characterization Methodology of RF Power Amplifiers - Application Note

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages

RF High Power GaN Solutions for 5G Infrastructure - Fact Sheet

Design Resources

Design Files

Filter by

A5G18H610W19N Peaking Class C S-Parameters

A5G18H610W19N Carrier Class AB S-Parameters

A5G18H610W19N Peaking Class AB S-Parameters

A5G18H610W19N 1800 MHz PCB DXF file

A5G18H610W19N 1805-1880 MHz Design Files

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Support

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1805-1880 MHz, 85 W Avg., 48 V Airfast® RF Power GaN Transistor

Product Details

Features

RF Performance Table

1800 MHz

Buy/Parametrics

Documentation

Filter by

Application Note (2)

Thermal Characterization Methodology of RF Power Amplifiers - Application Note[AN1955]

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages[AN1907]

Data Sheet (1)

A5G18H610W19N 1805–1880 MHz, 85 W Avg, 48 V Data Sheet[A5G18H610W19N]

Fact Sheet (1)

RF High Power GaN Solutions for 5G Infrastructure - Fact Sheet[MACROGANFS]

A5G18H610W19N 1805–1880 MHz, 85 W Avg, 48 V Data Sheet

Thermal Characterization Methodology of RF Power Amplifiers - Application Note

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages

RF High Power GaN Solutions for 5G Infrastructure - Fact Sheet

Design Resources

Design Files

Filter by

A5G18H610W19N Peaking Class C S-Parameters

A5G18H610W19N Carrier Class AB S-Parameters

A5G18H610W19N Peaking Class AB S-Parameters

A5G18H610W19N 1800 MHz PCB DXF file

A5G18H610W19N 1805-1880 MHz Design Files

Filter By

Support

What do you need help with?

Suggested Links

1805-1880 MHz, 85 W Avg., 48 V Airfast^® RF Power GaN Transistor