A2V09H400-04N|720-960 MHz, 197 W Avg, 48 V

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The A2V09H400-04NR3 107 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz.

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Data Sheet

Application Notes

Product Details

Features

Advanced high performance in-package Doherty
Greater negative gate-source voltage range for improved Class C operation
Designed for digital predistortion error correction systems
RoHS compliant

RF Performance Table

780 MHz

Typical Doherty Single-Carrier W-CDMA Performance: V_DD = 48 Vdc, I_DQA = 688 mA, V_GSB = 0.6 Vdc, Pout = 107 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency	G_ps (dB)	η_D (%)	Output PAR (dB)	ACPR (dBc)
733 MHz	17.5	56.3	7.2	–31.3
780 MHz	18.0	55.8	7.2	–36.4
821 MHz	17.4	55.6	6.9	–35.0

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Documentation

Quick reference to our documentation types.

5 documents

Compact List

Thermal Characterization Methodology of RF Power Amplifiers - Application Note[AN1955]

PDFJul 11, 2024Rev 2
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages[AN1907]

PDFMay 13, 2009Rev 3

A2V09H400-04N 720-960 MHz, 107 W Avg, 48 V Data Sheet[A2V09H400-04N]

PDFMar 10, 2017Rev 1

98ASA10833D[SOT1818-4]

PDFMar 22, 2016Rev B

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

PDFJan 19, 2004Rev 0

Design Resources

Design Files

Quick reference to our design files types.

1-5of 7 design files

Receive the full breakdown. See the product footprint and more in the eCad file.

Models
A2V09H400-04N S-Parameters Peaking Class C

S2PRev 0Nov 22, 2016 00:41:0034.4 KBA2V09H400-04N-PEAKING_CLASS-C

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Models
A2V09H400-04N S-Parameters Peaking Class AB

S2PRev 0Nov 22, 2016 00:41:0034.4 KBA2V09H400-04N-PEAKING-CLASS_AB

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Models
A2V09H400-04N S-Parameters Carrier

S2PRev 0Nov 22, 2016 00:41:0034.4 KBA2V09H400-04N-CARRIER

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Printed Circuit Boards and Schematics
A2V09H400-04N 780 MHz PCB DXF file

ZIPRev 2Dec 12, 2016 16:50:0055.9 KBA2V09H400-04N_780_PCB

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Calculators
A2V09H400-04N RF Power Electromigration MTTF Calculation Program

XLSXRev 0Jul 6, 2017 00:00:0083.7 KBA2V09H400-04N_MTTF_CALC

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Design Files - miscellaneous
A2V09H400-04N + A2T08VD020N 758-803 MHz Design Files

ZIPRev 0Jan 4, 2024 16:28:002.8 MBA2V09H400-04N-A2T08VD020N-758-803-MHz

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Design Files - miscellaneous
A2V09H400-04N 758-803 MHz Design Files

ZIPRev 0Jan 4, 2024 16:28:00764.0 KBA2V09H400-04N-758-803-MHz

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Show All

720-960 MHz, 107 W Avg., 48 V Airfast^® RF Power LDMOS Transistor

Product Details

Features

RF Performance Table

780 MHz

Buy/Parametrics

Documentation

Filter by

Application Note (2)

Thermal Characterization Methodology of RF Power Amplifiers - Application Note[AN1955]

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages[AN1907]

Data Sheet (1)

A2V09H400-04N 720-960 MHz, 107 W Avg, 48 V Data Sheet[A2V09H400-04N]

Package Information (1)

98ASA10833D[SOT1818-4]

Technical Notes (1)

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

A2V09H400-04N 720-960 MHz, 107 W Avg, 48 V Data Sheet

Thermal Characterization Methodology of RF Power Amplifiers - Application Note

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages

Using Data Sheet Impedances for RF LDMOS Devices

98ASA10833D

Design Resources

Design Files

Filter by

A2V09H400-04N S-Parameters Peaking Class C

A2V09H400-04N S-Parameters Peaking Class AB

A2V09H400-04N S-Parameters Carrier

A2V09H400-04N 780 MHz PCB DXF file

A2V09H400-04N RF Power Electromigration MTTF Calculation Program

A2V09H400-04N + A2T08VD020N 758-803 MHz Design Files

A2V09H400-04N 758-803 MHz Design Files

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Support

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720-960 MHz, 107 W Avg., 48 V Airfast® RF Power LDMOS Transistor

Product Details

Features

RF Performance Table

780 MHz

Buy/Parametrics

Documentation

Filter by

Application Note (2)

Thermal Characterization Methodology of RF Power Amplifiers - Application Note[AN1955]

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages[AN1907]

Data Sheet (1)

A2V09H400-04N 720-960 MHz, 107 W Avg, 48 V Data Sheet[A2V09H400-04N]

Package Information (1)

98ASA10833D[SOT1818-4]

Technical Notes (1)

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

A2V09H400-04N 720-960 MHz, 107 W Avg, 48 V Data Sheet

Thermal Characterization Methodology of RF Power Amplifiers - Application Note

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages

Using Data Sheet Impedances for RF LDMOS Devices

98ASA10833D

Design Resources

Design Files

Filter by

A2V09H400-04N S-Parameters Peaking Class C

A2V09H400-04N S-Parameters Peaking Class AB

A2V09H400-04N S-Parameters Carrier

A2V09H400-04N 780 MHz PCB DXF file

A2V09H400-04N RF Power Electromigration MTTF Calculation Program

A2V09H400-04N + A2T08VD020N 758-803 MHz Design Files

A2V09H400-04N 758-803 MHz Design Files

Filter By

Support

What do you need help with?

Suggested Links

720-960 MHz, 107 W Avg., 48 V Airfast^® RF Power LDMOS Transistor