AFV09P350-04N|720-960 MHz, 100 W Avg, 48 V

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The AFV09P350-04NR3 and AFV09P350-04GNR3 100 W symmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 720 to 960 MHz.

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Data Sheet

Application Notes

Product Details

Features

Production Tested in a Symmetrical Doherty Configuration
Greater Negative Gate-Source Voltage Range for Improved Class C Operation
Designed for Digital Predistortion Error Correction Systems
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13-inch Reel.

RF Performance Table

900 MHz

Typical Doherty Single-Carrier W-CDMA Performance: V_DD = 48 Vdc, I_DQA = 860 mA, V_GSB = 0.9 Vdc, Pout = 100 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency	G_ps (dB)	η_D (%)	Output PAR (dB)	ACPR (dBc)
920 MHz	19.5	48.5	7.2	–29.2
940 MHz	19.5	49.5	7.1	–32.0
960 MHz	19.2	48.0	7.0	–35.7

Buy/Parametrics

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Documentation

Quick reference to our documentation types.

7 documents

Compact List

Thermal Characterization Methodology of RF Power Amplifiers - Application Note[AN1955]

PDFJul 11, 2024Rev 2
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages[AN1907]

PDFMay 13, 2009Rev 3
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages[AN3789]

PDFMar 12, 2009Rev 0

AFV09P350-04NR3, AFV09P350-04GNR3 720-960 MHz, 100 W Avg., 48 V Airfast^® RF Power LDMOS Transistors – Data Sheet[AFV09P350-04N]

PDFJan 13, 2014Rev 0

98ASA10834D, OMNI, 20.57x9.96x3.81, Pitch 8.89, 5 Pins[SOT1825-1]

PDFMar 22, 2016Rev E
98ASA10833D[SOT1818-4]

PDFMar 22, 2016Rev B

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

PDFJan 19, 2004Rev 0

Design Resources

Design Files

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1-5of 8 design files

Receive the full breakdown. See the product footprint and more in the eCad file.

Models
RF High Power Model ADS Model Kit goto: Click the Download button to select.

HTMLRev 1Sep 20, 2016 00:00:00785 BRF_HIGH_POWER_MODEL_ADS_KIT
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Models
RF High Power Model AWR Model Kit goto: Click the Download button to select.

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Models
AFV09P350-04NR3, AFV09P350-04GNR3 Peaking 860 mA S-Parameters

S2PRev 0Jan 13, 2014 00:00:0019.2 KBAFV09P350_04N_PEAKING_860MA_SP

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Models
AFV09P350-04NR3, AFV09P350-04GNR3 Carrier 860 mA S-Parameters

S2PRev 0Jan 13, 2014 00:00:0019.2 KBAFV09P350_04N_CARRIER_860MA_SP

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Models
AFV09P350-04N RF High-Power Model AWR Product Model Design Kit

ZIPRev 1Apr 2, 2015 00:00:00466.3 KBAFV09P350_04N_MDL_AWR

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Models
AFV09P350-04NR3, AFV09P350-04GNR3 Peaking 0.9 Vgs S-Parameters

S2PRev 0Jan 13, 2014 00:00:0019.2 KBAFV09P350_04N_PEAKING_0P9VGS_SP

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Models
AFV09P350-04N RF High-Power Model ADS Product Model Design Kit

ZIPRev 1Jun 17, 2019 00:00:00170.9 KBAFV09P350_04N_MDL_ADS

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Calculators
AFV09P350-04NR3, AFV09P350-04GNR3 RF Power Electromigration MTTF Calculation Program

XLSXRev 0Jan 13, 2014 00:00:0034.2 KBAFV09P350_04N_MTTF_CALC

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Show All

720-960 MHz, 100 W Avg., 48 V Airfast® RF Power LDMOS Transistors

Product Details

Features

RF Performance Table

900 MHz

Buy/Parametrics

Documentation

Filter by

Application Note (3)

Thermal Characterization Methodology of RF Power Amplifiers - Application Note[AN1955]

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages[AN1907]

Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages[AN3789]

Data Sheet (1)

AFV09P350-04NR3, AFV09P350-04GNR3 720-960 MHz, 100 W Avg., 48 V Airfast® RF Power LDMOS Transistors – Data Sheet[AFV09P350-04N]

Package Information (2)

98ASA10834D, OMNI, 20.57x9.96x3.81, Pitch 8.89, 5 Pins[SOT1825-1]

98ASA10833D[SOT1818-4]

Technical Notes (1)

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

AFV09P350-04NR3, AFV09P350-04GNR3 720-960 MHz, 100 W Avg., 48 V Airfast® RF Power LDMOS Transistors – Data Sheet

Thermal Characterization Methodology of RF Power Amplifiers - Application Note

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages

Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages

Using Data Sheet Impedances for RF LDMOS Devices

98ASA10834D, OMNI, 20.57x9.96x3.81, Pitch 8.89, 5 Pins

98ASA10833D

Design Resources

Design Files

Filter by

RF High Power Model ADS Model Kit goto: Click the Download button to select.

RF High Power Model AWR Model Kit goto: Click the Download button to select.

AFV09P350-04NR3, AFV09P350-04GNR3 Peaking 860 mA S-Parameters

AFV09P350-04NR3, AFV09P350-04GNR3 Carrier 860 mA S-Parameters

AFV09P350-04N RF High-Power Model AWR Product Model Design Kit

AFV09P350-04NR3, AFV09P350-04GNR3 Peaking 0.9 Vgs S-Parameters

AFV09P350-04N RF High-Power Model ADS Product Model Design Kit

AFV09P350-04NR3, AFV09P350-04GNR3 RF Power Electromigration MTTF Calculation Program

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720-960 MHz, 100 W Avg., 48 V Airfast^® RF Power LDMOS Transistors

AFV09P350-04NR3, AFV09P350-04GNR3 720-960 MHz, 100 W Avg., 48 V Airfast^® RF Power LDMOS Transistors – Data Sheet[AFV09P350-04N]

AFV09P350-04NR3, AFV09P350-04GNR3 720-960 MHz, 100 W Avg., 48 V Airfast^® RF Power LDMOS Transistors – Data Sheet