A3G18D510-04S|1805-2200 MHz, 56 W Avg, 48 V

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This A3G18D510-04S 56 W symmetrical Doherty RF Power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 2200 MHz.

This part is characterized and performance is guaranteed for applications operating in the 1805 to 2200 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.

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Data Sheet

Application Notes

Product Details

Features

High terminal impedances for optimal broadband performance
Advanced high performance in-package Doherty
Improved linearized error vector magnitude with next generation signal
Able to withstand extremely high output VSWR and broadband operating conditions
RoHs compliant

RF Performance Tables

2000 MHz

Typical Doherty Single-Carrier W-CDMA Performance: V_DD= 48 Vdc, I_DQA = 250 mA, V_GSB = –5.0 Vdc, P_out = 56 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency	G_ps (dB)	η_D (%)	Output PAR (dB)	ACPR (dBc)
1805 MHz	16.0	54.3	8.0	–26.4
1995 MHz	16.8	52.2	7.8	–31.9
2170 MHz	15.4	53.9	7.6	–33.8

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Documentation

Quick reference to our documentation types.

3 documents

Compact List

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages[AN1908]

PDFFeb 24, 2011Rev 1

A3G18D510-04S 1805-2200 MHz, 56 W Avg, 48 V Data Sheet[A3G18D510-04S]

PDFAug 16, 2020Rev 0

NI-780S-4L[98ASA10718D]

PDFAug 15, 2016Rev C

Design Resources

Design Files

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3 design files

Receive the full breakdown. See the product footprint and more in the eCad file.

Models
A3G18D510-04S Carrier Class AB S-Parameters

S2PRev 0Aug 16, 2020 17:23:0050.0 KBA3G18D51004S-Carrier-Class-AB

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Models
A3G18D510-04S Carrier Class C S-Parameters

S2PRev 0Aug 16, 2020 17:25:0050.1 KBA3G18D51004S-Carrier-Class-C

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Printed Circuit Boards and Schematics
A3G18D510-04S 2000 MHz PCB DXF file

ZIPRev 3Aug 16, 2020 00:00:0044.8 KBA3G18D510-04S-2000-PCB

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1805-2200 MHz, 56 W Avg., 48 V Airfast^® RF Power LDMOS Transistor

Product Details

Features

RF Performance Tables

2000 MHz

Buy/Parametrics

Documentation

Filter by

Application Note (1)

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages[AN1908]

Data Sheet (1)

A3G18D510-04S 1805-2200 MHz, 56 W Avg, 48 V Data Sheet[A3G18D510-04S]

Package Information (1)

NI-780S-4L[98ASA10718D]

A3G18D510-04S 1805-2200 MHz, 56 W Avg, 48 V Data Sheet

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages

NI-780S-4L

Design Resources

Design Files

Filter by

A3G18D510-04S Carrier Class AB S-Parameters

A3G18D510-04S Carrier Class C S-Parameters

A3G18D510-04S 2000 MHz PCB DXF file

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Support

What do you need help with?

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1805-2200 MHz, 56 W Avg., 48 V Airfast® RF Power LDMOS Transistor

Product Details

Features

RF Performance Tables

2000 MHz

Buy/Parametrics

Documentation

Filter by

Application Note (1)

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages[AN1908]

Data Sheet (1)

A3G18D510-04S 1805-2200 MHz, 56 W Avg, 48 V Data Sheet[A3G18D510-04S]

Package Information (1)

NI-780S-4L[98ASA10718D]

A3G18D510-04S 1805-2200 MHz, 56 W Avg, 48 V Data Sheet

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages

NI-780S-4L

Design Resources

Design Files

Filter by

A3G18D510-04S Carrier Class AB S-Parameters

A3G18D510-04S Carrier Class C S-Parameters

A3G18D510-04S 2000 MHz PCB DXF file

Filter By

Support

What do you need help with?

Suggested Links

1805-2200 MHz, 56 W Avg., 48 V Airfast^® RF Power LDMOS Transistor