A3T18H360W23S|1805-1880 MHz, 63 W Avg, 28 V

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A3T18H360W23S

The A3T18H360W23S 63 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1880 MHz.

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Data Sheet

Application Notes

Product Details

Features

Advanced high performance in-package Doherty
Designed for wide instantaneous bandwidth applications
Greater negative gate-source voltage range for improved class C operation
Able to withstand extremely high output VSWR and broadband operating conditions
Designed for digital predistortion error correction systems
RoHS compliant

RF Performance Table

1800 MHz

Typical Doherty single-carrier W-CDMA performance: V_DD = 28 Vdc, I_DQA = 700 mA, V_GSB = 0.6 Vdc, P_out = 63 W Avg., input signal PAR = 9.9 dB @ 0.01% probability on CCDF.

Frequency	G_ps (dB)	η_D (%)	Output PAR (dB)	ACPR (dBc)
1805 MHz	16.3	52.8	7.7	–30.3
1840 MHz	16.6	52.3	7.6	–31.7
1880 MHz	16.6	51.6	7.5	–32.8

Buy/Parametrics

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Documentation

Quick reference to our documentation types.

4 documents

Compact List

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages[AN1908]

PDFFeb 24, 2011Rev 1

A3T18H360W23S 1805-1880 MHz, 63 W Avg, 28 V Data Sheet[A3T18H360W23S]

PDFJun 28, 2017Rev 1

98ASA00974D, ACP-1230S-4L2S[SOT1800-4]

PDFJun 21, 2017Rev A

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

PDFJan 19, 2004Rev 0

Design Resources

Design Files

Quick reference to our design files types.

5 design files

Receive the full breakdown. See the product footprint and more in the eCad file.

Models
A3T18H360W23S Peaking Class C S-Parameters

S2PRev 0May 26, 2017 00:00:0040.2 KBA3T18H360W23S-Peaking-Class-C

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Models
A3T18H360W23S Peaking Class AB S-Parameters

S2PRev 0May 26, 2017 00:00:0040.2 KBA3T18H360W23S-Peaking-Class-AB

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Models
A3T18H360W23S Carrier S-Parameters

S2PRev 0May 26, 2017 00:00:0040.2 KBA3T18H360W23S-Carrier

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Printed Circuit Boards and Schematics
A3T18H360W23S 1800 MHz PCB dxf file

ZIPRev 2May 26, 2017 00:00:0099.2 KBA3T18H360W23S-1800-PCB

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Calculators
A3T18H360W23S RF Power Electromigration MTTF Calculation Program

XLSXRev 0Jul 6, 2017 00:00:0081.1 KBA3T18H360W23S_MTTF_CALC

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1805-1880 MHz, 63 W Avg., 28 V Airfast^® RF Power LDMOS Transistor

Product Details

Features

RF Performance Table

1800 MHz

Buy/Parametrics

Documentation

Filter by

Application Note (1)

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages[AN1908]

Data Sheet (1)

A3T18H360W23S 1805-1880 MHz, 63 W Avg, 28 V Data Sheet[A3T18H360W23S]

Package Information (1)

98ASA00974D, ACP-1230S-4L2S[SOT1800-4]

Technical Notes (1)

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

A3T18H360W23S 1805-1880 MHz, 63 W Avg, 28 V Data Sheet

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages

Using Data Sheet Impedances for RF LDMOS Devices

98ASA00974D, ACP-1230S-4L2S

Design Resources

Design Files

Filter by

A3T18H360W23S Peaking Class C S-Parameters

A3T18H360W23S Peaking Class AB S-Parameters

A3T18H360W23S Carrier S-Parameters

A3T18H360W23S 1800 MHz PCB dxf file

A3T18H360W23S RF Power Electromigration MTTF Calculation Program

Filter By

Support

What do you need help with?

Suggested Links

1805-1880 MHz, 63 W Avg., 28 V Airfast® RF Power LDMOS Transistor

Product Details

Features

RF Performance Table

1800 MHz

Buy/Parametrics

Documentation

Filter by

Application Note (1)

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages[AN1908]

Data Sheet (1)

A3T18H360W23S 1805-1880 MHz, 63 W Avg, 28 V Data Sheet[A3T18H360W23S]

Package Information (1)

98ASA00974D, ACP-1230S-4L2S[SOT1800-4]

Technical Notes (1)

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

A3T18H360W23S 1805-1880 MHz, 63 W Avg, 28 V Data Sheet

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages

Using Data Sheet Impedances for RF LDMOS Devices

98ASA00974D, ACP-1230S-4L2S

Design Resources

Design Files

Filter by

A3T18H360W23S Peaking Class C S-Parameters

A3T18H360W23S Peaking Class AB S-Parameters

A3T18H360W23S Carrier S-Parameters

A3T18H360W23S 1800 MHz PCB dxf file

A3T18H360W23S RF Power Electromigration MTTF Calculation Program

Filter By

Support

What do you need help with?

Suggested Links

1805-1880 MHz, 63 W Avg., 28 V Airfast^® RF Power LDMOS Transistor