MRFE6VP5150N|150 W CW, 1.8-600 MHz, , 50 V

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MRFE6VP5150N

These high ruggedness devices, MRFE6VP5150NR1 and MRFE6VP5150GNR1, are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz.

See product image

Data Sheet

Application Notes

Product Details

Features

Wide Operating Frequency Range
Extreme Ruggedness
Unmatched Input and Output Allowing Wide Frequency Range Utilization
Integrated Stability Enhancements
Low Thermal Resistance
Integrated ESD Protection Circuitry
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13-inch Reel.

RF Performance Tables

87.5-108 MHz Broadband

V_DD = 50 Vdc

Frequency (MHz)	Signal Type	Pout (W)	G_ps (dB)	η_D (%)
87.5-108^(1,3)	CW	179	22.5	74.6

230 MHz Narrowband

V_DD = 50 Vdc

Frequency (MHz)	Signal Type	Pout (W)	G_ps (dB)	η_D (%)
230⁽²⁾	CW	150	26.3	72.0
230⁽²⁾	Pulse (100 µsec, 20% Duty Cycle)	150 Peak	26.1	70.3

Ruggedness

Frequency (MHz)	Signal Type	VSWR	Pin (W)	Test Voltage	Result
98⁽¹⁾	CW	> 65:1 at all Phase Angles	3.0 (3 dB Overdrive)	50	No Device Degradation
230⁽²⁾	Pulse (100 µsec, 20% Duty Cycle)	> 65:1 at all Phase Angles	0.62 Peak (3 dB Overdrive)	50	No Device Degradation

1. Measured in 87.5-108 MHz broadband reference circuit.
2. Measured in 230 MHz narrowband test circuit.
3. The values shown are the minimum measured performance numbers across the indicated frequency range.

Buy/Parametrics

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Documentation

Quick reference to our documentation types.

7 documents

Compact List

Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987[AN1987]

PDFMay 12, 2004Rev 1

MRFE6VP5150NR1, MRFE6VP5150GNR1 1.8-600 MHz, 150 W CW, 50 V Wideband RF Power LDMOS Transistors - Data Sheet[MRFE6VP5150N]

PDFJul 25, 2014Rev 1

98ASA10578D, TO, 17.0x9.0x2.59, Pitch 0.21, 4 Pins[SOT1736-2]

PDFMar 17, 2016Rev E
98ASA10577D, TO, 17.53x9.02x2.59, Pitch 5.38, 5 Pins[SOT1736-1]

PDFJan 18, 2016Rev F

Rugged Plastic for Industrial Applications[RF_RUGGED_PLASTIC_INDUSTRIAL_TRN]

PDFMay 23, 2014Rev 0

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

PDFJan 19, 2004Rev 0

Designing with Plastic RF Power Transistors White Paper[RFPLASTICWP]

PDFSep 24, 2015Rev 2

Design Resources

Design Files

Quick reference to our design files types.

5 design files

Receive the full breakdown. See the product footprint and more in the eCad file.

Models
RF High Power Model ADS Model Kit goto: Click the Download button to select.

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RF High Power Model AWR Model Kit goto: Click the Download button to select.

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Models
MRFE6VP5150N RF High-Power Model AWR Product Model Design Kit

ZIPRev 0Apr 2, 2015 00:00:00410.9 KBMRFE6VP5150N_MDL_AWR

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Models
MRFE6VP5150N RF High-Power Model ADS Product Model Design Kit

ZIPRev 1Jun 17, 2019 00:00:00135.5 KBMRFE6VP5150N_MDL_ADS

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Calculators
MRFE6VP5150N RF Power Electromigration MTTF Calculation Program

XLSXRev 0Apr 3, 2019 00:00:0091.3 KBMRFE6VP5150N-MTTF-CALC

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1.8-600 MHz, 150 W CW, 50 V Wideband RF Power LDMOS Transistors

Product Details

Features

RF Performance Tables

87.5-108 MHz Broadband

230 MHz Narrowband

Ruggedness

Buy/Parametrics

Documentation

Filter by

Application Note (1)

Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987[AN1987]

Data Sheet (1)

MRFE6VP5150NR1, MRFE6VP5150GNR1 1.8-600 MHz, 150 W CW, 50 V Wideband RF Power LDMOS Transistors - Data Sheet[MRFE6VP5150N]

Package Information (2)

98ASA10578D, TO, 17.0x9.0x2.59, Pitch 0.21, 4 Pins[SOT1736-2]

98ASA10577D, TO, 17.53x9.02x2.59, Pitch 5.38, 5 Pins[SOT1736-1]

Supporting Information (1)

Rugged Plastic for Industrial Applications[RF_RUGGED_PLASTIC_INDUSTRIAL_TRN]

Technical Notes (1)

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

White Paper (1)

Designing with Plastic RF Power Transistors White Paper[RFPLASTICWP]

MRFE6VP5150NR1, MRFE6VP5150GNR1 1.8-600 MHz, 150 W CW, 50 V Wideband RF Power LDMOS Transistors - Data Sheet

Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987

Using Data Sheet Impedances for RF LDMOS Devices

98ASA10578D, TO, 17.0x9.0x2.59, Pitch 0.21, 4 Pins

98ASA10577D, TO, 17.53x9.02x2.59, Pitch 5.38, 5 Pins

Rugged Plastic for Industrial Applications

Designing with Plastic RF Power Transistors White Paper

Design Resources

Design Files

Filter by

RF High Power Model ADS Model Kit goto: Click the Download button to select.

RF High Power Model AWR Model Kit goto: Click the Download button to select.

MRFE6VP5150N RF High-Power Model AWR Product Model Design Kit

MRFE6VP5150N RF High-Power Model ADS Product Model Design Kit

MRFE6VP5150N RF Power Electromigration MTTF Calculation Program

Filter By

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