MRFE6VP6600N|600 W CW, 1.8-600 MHz, 50 V

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MRFE6VP6600N

These high ruggedness devices, MRFE6VP6600N and MRFE6VP6600GN, are designed for use in high VSWR industrial, medical, broadcast, aerospace, and mobile radio applications. Their unmatched input and output design allows for wide frequency range use from 1.8 to 600 MHz.

See product image

Data Sheet

Application Notes

Product Details

Features

Unmatched Input and Output Allowing Wide Frequency Range Utilization
Device can be used Single-Ended or in a Push-Pull Configuration
Qualified Up to a Maximum of 50 V_DD Operation
Characterized from 30 to 50 V for Extended Power Range
Suitable for Linear Application with Appropriate Biasing
Integrated ESD Protection with Greater Negative Gate-Source Voltage Range for Improved Class C Operation
Characterized with Series Equivalent Large-Signal Impedance Parameters
Recommended drivers: AFT05MS004N (4 W) or MRFE6VS25N (25 W)
RoHS Compliant

Broadcast
- FM broadcast
- HF and VHF broadcast
Industrial, Scientific, Medical (ISM)
- CO₂ laser generation
- Plasma etching
- Particle accelerators (synchrotrons)
- MRI
- Industrial heating/welding

Aerospace
- VHF omnidirectional range (VOR)
- Weather radar
Mobile Radio
- HF and VHF communications
- PMR base stations

RF Performance Tables

Typical Performance

V_DD = 50 Vdc

Frequency (MHz)	Signal Type	Pout (W)	G_ps (dB)	η_D (%)
87.5-108^(1,3)	CW	600 CW	24.0	81.8
230⁽²⁾	Pulse (100 µsec, 20% Duty Cycle)	600 Peak	24.7	73.5

Load Mismatch/Ruggedness

Frequency (MHz)	Signal Type	VSWR	Pout (W)	Test Voltage	Result
230⁽²⁾	Pulse (100 µsec, 20% Duty Cycle)	> 65:1 at all Phase Angles	4.0 Peak (3 dB Overdrive)	50	No Device Degradation

1. Measured in 87.5-108 MHz broadband reference circuit.
2. Measured in 230 MHz narrowband production test circuit.
3. The values shown are the center band performance numbers across the indicated frequency range.

Buy/Parametrics

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Documentation

Quick reference to our documentation types.

5 documents

Compact List

Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages[AN3789]

PDFMar 12, 2009Rev 0

MRFE6VP6600N 600 W CW over 1.8-600 MHz RF Power Data Sheet[MRFE6VP6600N]

PDFMay 26, 2015Rev 0

98ASA10834D, OMNI, 20.57x9.96x3.81, Pitch 8.89, 5 Pins[SOT1825-1]

PDFMar 22, 2016Rev E
98ASA10833D[SOT1818-4]

PDFMar 22, 2016Rev B

Designing with Plastic RF Power Transistors White Paper[RFPLASTICWP]

PDFSep 24, 2015Rev 2

Design Resources

Design Files

Quick reference to our design files types.

1-5of 7 design files

Receive the full breakdown. See the product footprint and more in the eCad file.

Models
RF High Power Model ADS Model Kit goto: Click the Download button to select.

HTMLRev 1Sep 20, 2016 00:00:00785 BRF_HIGH_POWER_MODEL_ADS_KIT
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RF High Power Model AWR Model Kit goto: Click the Download button to select.

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Models
MRFE6VP6600N RF High-Power Model ADS Product Model Design Kit

ZIPRev 1Jun 17, 2019 00:00:0090.9 KBMRFE6VP6600N_MDL_ADS

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Models
MRFE6VP6600N, MRFE6VP6600GN S-Parameters

S2PRev 0May 26, 2015 00:00:0010.7 KBMRFE6VP6600N_SP

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Models
MRFE6VP6600N RF High-Power Model AWR Product Model Design Kit

ZIPRev 0Jul 21, 2015 00:00:00247.1 KBMRFE6VP6600N_MDL_AWR

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Printed Circuit Boards and Schematics
MRFE6VP6600N 87.5-108 MHz PCB DXF file

ZIPRev 0May 26, 2015 00:00:00410.0 KBMRFE6VP6600N_87P5_108_PCB

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Printed Circuit Boards and Schematics
MRFE6VP6600N 230 MHz PCB DXF file

ZIPRev 0May 26, 2015 00:00:00327.6 KBMRFE6VP6600N_230_PCB

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Show All

1.8-600 MHz, 600 W CW, 50 V Wideband RF Power LDMOS Transistors

Product Details

Features

RF Performance Tables

Typical Performance

Load Mismatch/Ruggedness

Buy/Parametrics

Documentation

Filter by

Application Note (1)

Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages[AN3789]

Data Sheet (1)

MRFE6VP6600N 600 W CW over 1.8-600 MHz RF Power Data Sheet[MRFE6VP6600N]

Package Information (2)

98ASA10834D, OMNI, 20.57x9.96x3.81, Pitch 8.89, 5 Pins[SOT1825-1]

98ASA10833D[SOT1818-4]

White Paper (1)

Designing with Plastic RF Power Transistors White Paper[RFPLASTICWP]

MRFE6VP6600N 600 W CW over 1.8-600 MHz RF Power Data Sheet

Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages

98ASA10834D, OMNI, 20.57x9.96x3.81, Pitch 8.89, 5 Pins

98ASA10833D

Designing with Plastic RF Power Transistors White Paper

Design Resources

Design Files

Filter by

RF High Power Model ADS Model Kit goto: Click the Download button to select.

RF High Power Model AWR Model Kit goto: Click the Download button to select.

MRFE6VP6600N RF High-Power Model ADS Product Model Design Kit

MRFE6VP6600N, MRFE6VP6600GN S-Parameters

MRFE6VP6600N RF High-Power Model AWR Product Model Design Kit

MRFE6VP6600N 87.5-108 MHz PCB DXF file

MRFE6VP6600N 230 MHz PCB DXF file

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