A3T23H300W23S|2300-2400 MHz, 63 W Avg, 30 V

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The A3T23H300W23S 63 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2300 to 2400 MHz.

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Data Sheet

Application Notes

Product Details

Features

Advanced high performance in-package Doherty
Designed for wide instantaneous bandwidth applications
Greater negative gate-source voltage range for improved Class C operation
Able to withstand extremely high output VSWR and broadband operating conditions
Designed for digital predistortion error correction systems
RoHS compliant

RF Performance Table

2300 MHz

Typical Doherty Single-Carrier W-CDMA Performance: V_DD = 30 Vdc, I_DQA = 500 mA, V_GSB = 0.7 Vdc, P_out = 63 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency	G_ps (dB)	η_D (%)	Output PAR (dB)	ACPR (dBc)
2300 MHz	15.6	49.3	8.4	–30.1
2350 MHz	16.1	48.7	8.5	–31.9
2400 MHz	16.1	48.0	8.2	–32.7

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Documentation

Quick reference to our documentation types.

4 documents

Compact List

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages[AN1908]

PDFFeb 24, 2011Rev 1

A3T23H300W23S 2300-2400 MHz, 63 W Avg, 30 V Data Sheet[A3T23H300W23S]

PDFJul 12, 2018Rev 0

98ASA00974D, ACP-1230S-4L2S[SOT1800-4]

PDFJun 21, 2017Rev A

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

PDFJan 19, 2004Rev 0

Design Resources

Design Files

Quick reference to our design files types.

4 design files

Receive the full breakdown. See the product footprint and more in the eCad file.

Models
A3T23H300W23S Carrier S-Parameters

S2PRev 0Jul 12, 2018 00:00:00272.4 KBA3T23H300W23S-Carrier

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Models
A3T23H300W23S Peaking Class C S-Parameters

S2PRev 0Jul 12, 2018 00:00:00272.4 KBA3T23H300W23S-Peaking-Class-C

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Models
A3T23H300W23S Peaking Class AB S-Parameters

S2PRev 0Jul 12, 2018 00:00:00272.4 KBA3T23H300W23S-Peaking-Class-AB

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Printed Circuit Boards and Schematics
A3T23H300W23S 2300 MHz PCB DXF file

ZIPRev 2Jul 12, 2018 00:00:0021.4 KBA3T23H300W23S-2300-PCB

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2300-2400 MHz, 63 W Avg., 30 V Airfast^® RF Power LDMOS Transistor

Product Details

Features

RF Performance Table

2300 MHz

Buy/Parametrics

Documentation

Filter by

Application Note (1)

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages[AN1908]

Data Sheet (1)

A3T23H300W23S 2300-2400 MHz, 63 W Avg, 30 V Data Sheet[A3T23H300W23S]

Package Information (1)

98ASA00974D, ACP-1230S-4L2S[SOT1800-4]

Technical Notes (1)

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

A3T23H300W23S 2300-2400 MHz, 63 W Avg, 30 V Data Sheet

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages

Using Data Sheet Impedances for RF LDMOS Devices

98ASA00974D, ACP-1230S-4L2S

Design Resources

Design Files

Filter by

A3T23H300W23S Carrier S-Parameters

A3T23H300W23S Peaking Class C S-Parameters

A3T23H300W23S Peaking Class AB S-Parameters

A3T23H300W23S 2300 MHz PCB DXF file

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Support

What do you need help with?

Suggested Links

2300-2400 MHz, 63 W Avg., 30 V Airfast® RF Power LDMOS Transistor

Product Details

Features

RF Performance Table

2300 MHz

Buy/Parametrics

Documentation

Filter by

Application Note (1)

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages[AN1908]

Data Sheet (1)

A3T23H300W23S 2300-2400 MHz, 63 W Avg, 30 V Data Sheet[A3T23H300W23S]

Package Information (1)

98ASA00974D, ACP-1230S-4L2S[SOT1800-4]

Technical Notes (1)

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

A3T23H300W23S 2300-2400 MHz, 63 W Avg, 30 V Data Sheet

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages

Using Data Sheet Impedances for RF LDMOS Devices

98ASA00974D, ACP-1230S-4L2S

Design Resources

Design Files

Filter by

A3T23H300W23S Carrier S-Parameters

A3T23H300W23S Peaking Class C S-Parameters

A3T23H300W23S Peaking Class AB S-Parameters

A3T23H300W23S 2300 MHz PCB DXF file

Filter By

Support

What do you need help with?

Suggested Links

2300-2400 MHz, 63 W Avg., 30 V Airfast^® RF Power LDMOS Transistor