MRF24G300HS|300 W CW, 2400-2500 MHz, 50 V

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These 300 W CW GaN transistors, MRF24G300HS and MRF24G300H, are designed for industrial, scientific and medical (ISM) applications at 2450 MHz. These devices are suitable for use in CW, pulse, cycling and linear applications. These high gain, high efficiency devices are easy to use and will provide long life in even the most demanding environments.

These parts are characterized and performance is guaranteed for applications operating in the 2400 to 2500 MHz band. There is no guarantee of performance when these parts are used in applications designed outside of these frequencies.

Data Sheet

Application Notes

Product Details

Features

Advanced GaN on SiC, for optimal thermal performance
Characterized for CW, long pulse (up to several seconds) and short pulse operations
Device can be used in a single-ended or push-pull configuration
Input matched for simplified input circuitry
Qualified up to 55 V
Suitable for linear application
RoHS Compliant

Industrial heating
Welding and heat sealing
Plasma generation
Lighting
Scientific instrumentation
Medical
- Microwave ablation
- Diathermy

RF Performance Tables

Typical Performance

In 2400-2500 MHz MRF24G300HS reference circuit, V_DD = 48 Vdc, V_GS(A+B) = –5 Vdc⁽¹⁾

Frequency (MHz)	Signal Type	P_in (W)	P_out (W)	G_ps (dB)	η_D (%)
2400	CW	10.0	336	15.3	70.4
2450		10.0	332	15.2	73.0
2500		10.0	307	14.9	74.4

1. All data measured in fixture with device soldered to heatsink.

Load Mismatch/Ruggedness

Frequency (MHz)	Signal Type	VSWR	P_in (W)	Test Voltage	Result
2450	Pulse (100 µsec, 20% Duty Cycle)	> 20:1 at All Phase Angles	12.6 Peak	55	No Device Degradation

Buy/Parametrics

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Documentation

Quick reference to our documentation types.

5 documents

Compact List

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages[AN1908]

PDFFeb 24, 2011Rev 1

ARCHIVED - MRF24G300HS 300 W CW, 2400-2500 MHz, 50 V Data Sheet[MRF24G300HS]

PDFSep 23, 2019Rev 0

NI-780S-4L[98ASA10718D]

PDFAug 15, 2016Rev C
98ASA10793D, NI-780H-4L[SOT1827-1]

PDFMar 21, 2016Rev A

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

PDFJan 19, 2004Rev 0

Design Resources

Design Files

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2 design files

Receive the full breakdown. See the product footprint and more in the eCad file.

Models
MRF24G300HS S-Parameters

S2PRev 0Sep 23, 2019 19:04:0040.1 KBMRF24G300H-SP

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Printed Circuit Boards and Schematics
MRF24G300HS 2400-2500 MHz Reference Circuit Design Files

ZIPRev 0Sep 20, 2019 00:00:00921.9 KBMRF24G300HS-2400-2500-MHz-Reference-Circuit

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300 W CW over 2400-2500 MHz, 50 V RF Power GaN Transistor

Product Details

Features

RF Performance Tables

Typical Performance

Load Mismatch/Ruggedness

Buy/Parametrics

Documentation

Filter by

Application Note (1)

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages[AN1908]

Data Sheet (1)

ARCHIVED - MRF24G300HS 300 W CW, 2400-2500 MHz, 50 V Data Sheet[MRF24G300HS]

Package Information (2)

NI-780S-4L[98ASA10718D]

98ASA10793D, NI-780H-4L[SOT1827-1]

Technical Notes (1)

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

ARCHIVED - MRF24G300HS 300 W CW, 2400-2500 MHz, 50 V Data Sheet

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages

Using Data Sheet Impedances for RF LDMOS Devices

NI-780S-4L

98ASA10793D, NI-780H-4L

Design Resources

Design Files

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MRF24G300HS S-Parameters

MRF24G300HS 2400-2500 MHz Reference Circuit Design Files

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