MWE6IC9100N|865-960 MHz, 100 W, 26 V

For best experience this site requires Javascript to be enabled. To enable on your browser, follow our accessibility instructions.

Roll over image to zoom in

The MWE6IC9100NR1 and MWE6IC9100NBR1 wideband integrated circuits are designed with on-chip matching that make them usable from 865 to 960 MHz. These multi-stage structures are rated for 26 to 32 Volt operation and cover all typical cellular base station modulation formats.

Data Sheet

Application Notes

Documentation

Quick reference to our documentation types.

10 documents

Compact List

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages[AN1907]

PDFMay 13, 2009Rev 3
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages[AN3789]

PDFMar 12, 2009Rev 0
Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages[AN3263]

PDFJun 7, 2006Rev 0
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987[AN1987]

PDFMay 12, 2004Rev 1
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977[AN1977]

PDFOct 9, 2003Rev 0

MWE6IC9100NBR1 960 MHz, 100 W, 26 V GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifier[MWE6IC9100N-2]

PDFOct 31, 2011Rev 6
MWE6IC9100NR1 960 MHz, 100 W, 26 V GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifier[MWE6IC9100N-1]

PDFOct 31, 2011Rev 4.1

98ASA10650D, TO, 17.65x9.25x2.59, Pitch 0.36, 14 Pins[SOT1720-2]

PDFMar 18, 2016Rev B
98ASA10649D, TO, 23.65x9.25x2.59, Pitch 9.02, 14 Pins[SOT1721-1]

PDFFeb 26, 2016Rev B

Advances in Airfast RFICs White Paper[AIRFASTWBFWP]

PDFMay 15, 2015Rev 0

Design Resources

Design Files

Quick reference to our design files types.

3 design files

Receive the full breakdown. See the product footprint and more in the eCad file.

Models
RF High Power Model ADS Model Kit goto: Click the Download button to select.

HTMLRev 1Sep 20, 2016 00:00:00785 BRF_HIGH_POWER_MODEL_ADS_KIT
DownloadToggle Dropdown
- Add to Queue
- Remove from Queue
- Recommended for large file sizes.
- View Queue
Models
MWE6IC9100NBR1, MWE6IC9100NR1 RF High-Power Model ADS Product Model Design Kit

ZIPRev 2Jun 17, 2019 00:00:001.8 MBMWE6IC9100N_MDL_ADS

Account Required
DownloadToggle Dropdown
- Add to Queue
- Remove from Queue
- Recommended for large file sizes.
- View Queue
Calculators
MWE6IC9100NBR1, MWE6IC9100NR1 RF Power Electromigration MTTF Calculation Program

XLSRev 1Feb 12, 2007 00:00:0044.5 KBMWE6IC9100N_MTTF_CALC

Account Required
DownloadToggle Dropdown
- Add to Queue
- Remove from Queue
- Recommended for large file sizes.
- View Queue

865-960 MHz, 100 W, 26 V GSM/GSM EDGE RF LDMOS Wideband Integrated Amplifiers

Documentation

Filter by

Application Note (5)

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages[AN1907]

Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages[AN3789]

Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages[AN3263]

Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987[AN1987]

Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977[AN1977]

Data Sheet (2)

MWE6IC9100NBR1 960 MHz, 100 W, 26 V GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifier[MWE6IC9100N-2]

MWE6IC9100NR1 960 MHz, 100 W, 26 V GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifier[MWE6IC9100N-1]

Package Information (2)

98ASA10650D, TO, 17.65x9.25x2.59, Pitch 0.36, 14 Pins[SOT1720-2]

98ASA10649D, TO, 23.65x9.25x2.59, Pitch 9.02, 14 Pins[SOT1721-1]

White Paper (1)

Advances in Airfast RFICs White Paper[AIRFASTWBFWP]

MWE6IC9100NBR1 960 MHz, 100 W, 26 V GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifier

MWE6IC9100NR1 960 MHz, 100 W, 26 V GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifier

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages

Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages

Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages

Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987

Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977

98ASA10650D, TO, 17.65x9.25x2.59, Pitch 0.36, 14 Pins

98ASA10649D, TO, 23.65x9.25x2.59, Pitch 9.02, 14 Pins

Advances in Airfast RFICs White Paper

Design Resources

Design Files

Filter by

RF High Power Model ADS Model Kit goto: Click the Download button to select.

MWE6IC9100NBR1, MWE6IC9100NR1 RF High-Power Model ADS Product Model Design Kit

MWE6IC9100NBR1, MWE6IC9100NR1 RF Power Electromigration MTTF Calculation Program

Filter By

Support

What do you need help with?

Suggested Links