A3G35H100-04S|Airfast RF Power GaN Transistor

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The A3G35H100-04SR3 14 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 3400 to 3600 MHz.

This part is characterized and performance is guaranteed for applications operating in the 3400 to 3600 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.

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Data Sheet

Application Notes

Product Details

Features

High terminal impedances for optimal broadband performance
Advanced high performance in-package Doherty
Able to withstand extremely high output VSWR and broadband operating conditions
RoHS compliant

RF Performance Table

3500 MHz

Typical Doherty Single-Carrier W-CDMA Performance: V_DD = 48 Vdc, I_DQA = 80 mA, V_GSB = –5.0 Vdc, P_out = 14 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency	G_ps (dB)	η_D (%)	Output PAR (dB)	ACPR (dBc)
3400 MHz	14.0	43.8	9.6	–34.0
3500 MHz	14.0	41.4	9.7	–34.5
3600 MHz	14.0	42.5	9.6	–32.2

Buy/Parametrics

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Documentation

Quick reference to our documentation types.

3 documents

Compact List

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages[AN1908]

PDFFeb 24, 2011Rev 1

ARCHIVED - A3G35H100-04S 3400-3600 MHz, 14 W Avg, 48 V GaN Data Sheet[A3G35H100-04S]

PDFMay 8, 2018Rev 0

NI-780S-4L[98ASA10718D]

PDFAug 15, 2016Rev C

Design Resources

Design Files

Quick reference to our design files types.

4 design files

Receive the full breakdown. See the product footprint and more in the eCad file.

Models
A3G35H100-04S Peaking Class C S-Parameters

S2PRev 0May 8, 2018 00:00:0051.4 KBA3G35H100-04S-Peaking-Class-C

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Models
A3G35H100-04S Carrier S-Parameters

S2PRev 0May 8, 2018 00:00:0051.4 KBA3G35H100-04S-Carrier

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Models
A3G35H100-04S Peaking Class AB S-Parameters

S2PRev 0May 8, 2018 00:00:0051.4 KBA3G35H100-04S-Peaking-Class-AB

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Printed Circuit Boards and Schematics
A3G35H100-04S 3500 MHz PCB DXF file

ZIPRev 5May 8, 2018 00:00:0031.6 KBA3G35H100-04S-3500-PCB

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3400-3600 MHz, 14 W Avg., 48 V Airfast^® RF Power GaN Transistor

Product Details

Features

RF Performance Table

3500 MHz

Buy/Parametrics

Documentation

Filter by

Application Note (1)

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages[AN1908]

Data Sheet (1)

ARCHIVED - A3G35H100-04S 3400-3600 MHz, 14 W Avg, 48 V GaN Data Sheet[A3G35H100-04S]

Package Information (1)

NI-780S-4L[98ASA10718D]

ARCHIVED - A3G35H100-04S 3400-3600 MHz, 14 W Avg, 48 V GaN Data Sheet

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages

NI-780S-4L

Design Resources

Design Files

Filter by

A3G35H100-04S Peaking Class C S-Parameters

A3G35H100-04S Carrier S-Parameters

A3G35H100-04S Peaking Class AB S-Parameters

A3G35H100-04S 3500 MHz PCB DXF file

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Support

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3400-3600 MHz, 14 W Avg., 48 V Airfast® RF Power GaN Transistor

Product Details

Features

RF Performance Table

3500 MHz

Buy/Parametrics

Documentation

Filter by

Application Note (1)

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages[AN1908]

Data Sheet (1)

ARCHIVED - A3G35H100-04S 3400-3600 MHz, 14 W Avg, 48 V GaN Data Sheet[A3G35H100-04S]

Package Information (1)

NI-780S-4L[98ASA10718D]

ARCHIVED - A3G35H100-04S 3400-3600 MHz, 14 W Avg, 48 V GaN Data Sheet

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages

NI-780S-4L

Design Resources

Design Files

Filter by

A3G35H100-04S Peaking Class C S-Parameters

A3G35H100-04S Carrier S-Parameters

A3G35H100-04S Peaking Class AB S-Parameters

A3G35H100-04S 3500 MHz PCB DXF file

Filter By

Support

What do you need help with?

Suggested Links

3400-3600 MHz, 14 W Avg., 48 V Airfast^® RF Power GaN Transistor