2110-2170 MHz, 32 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers

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The MD7IC21100NR1, MD7IC21100GNR1 and MD7IC21100NBR1 wideband integrated circuits are designed with on-chip matching that make them usable from 2110 to 2170 MHz. This multi-stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation formats including TD-SCDMA.

Data Sheet

Application Notes

Documentation

Quick reference to our documentation types.

8 documents

Compact List

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages[AN1907]

PDFMay 13, 2009Rev 3
Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages[AN3263]

PDFJun 7, 2006Rev 0
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987[AN1987]

PDFMay 12, 2004Rev 1
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977[AN1977]

PDFOct 9, 2003Rev 0

MD7IC21100NR1, MD7IC21100GNR1, MD7IC21100NBR1 2110-2170 MHz, 32 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers[MD7IC21100N]

PDFFeb 9, 2012Rev 2

98ASA10650D, TO, 17.65x9.25x2.59, Pitch 0.36, 14 Pins[SOT1720-2]

PDFMar 18, 2016Rev B
98ASA10649D, TO, 23.65x9.25x2.59, Pitch 9.02, 14 Pins[SOT1721-1]

PDFFeb 26, 2016Rev B
98ASA10653D, TO, 17.6x9.3x2.59, Pitch 1.02, 14 Pins[SOT1720-3]

PDFFeb 26, 2016Rev B

Design Resources

Design Files

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4 design files

Receive the full breakdown. See the product footprint and more in the eCad file.

Models
RF High Power Model ADS Model Kit goto: Click the Download button to select.

HTMLRev 1Sep 20, 2016 00:00:00785 BRF_HIGH_POWER_MODEL_ADS_KIT
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Models
RF High Power Model AWR Model Kit goto: Click the Download button to select.

HTMLRev 1Sep 20, 2016 00:00:00802 BRF_HIGH_POWER_MODEL_AWR_KIT
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Models
MD7IC21100N, MD7IC21100NB RF High-Power Model AWR Product Model Design Kit

ZIPRev 1Jul 22, 2011 00:00:00746.7 KBMD7IC21100N_MDL_AWR

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Calculators
MD7IC21100NR1, MD7IC21100NBR1, MD7IC21100GNR1 RF Power Electromigration MTTF Calculation Program

XLSRev 0Nov 11, 2008 00:00:0035.3 KBMD7IC21100N_MTTF_CALC

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2110-2170 MHz, 32 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers

Documentation

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Application Note (4)

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages[AN1907]

Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages[AN3263]

Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987[AN1987]

Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977[AN1977]

Data Sheet (1)

MD7IC21100NR1, MD7IC21100GNR1, MD7IC21100NBR1 2110-2170 MHz, 32 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers[MD7IC21100N]

Package Information (3)

98ASA10650D, TO, 17.65x9.25x2.59, Pitch 0.36, 14 Pins[SOT1720-2]

98ASA10649D, TO, 23.65x9.25x2.59, Pitch 9.02, 14 Pins[SOT1721-1]

98ASA10653D, TO, 17.6x9.3x2.59, Pitch 1.02, 14 Pins[SOT1720-3]

MD7IC21100NR1, MD7IC21100GNR1, MD7IC21100NBR1 2110-2170 MHz, 32 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages

Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages

Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987

Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977

98ASA10650D, TO, 17.65x9.25x2.59, Pitch 0.36, 14 Pins

98ASA10649D, TO, 23.65x9.25x2.59, Pitch 9.02, 14 Pins

98ASA10653D, TO, 17.6x9.3x2.59, Pitch 1.02, 14 Pins

Design Resources

Design Files

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RF High Power Model ADS Model Kit goto: Click the Download button to select.

RF High Power Model AWR Model Kit goto: Click the Download button to select.

MD7IC21100N, MD7IC21100NB RF High-Power Model AWR Product Model Design Kit

MD7IC21100NR1, MD7IC21100NBR1, MD7IC21100GNR1 RF Power Electromigration MTTF Calculation Program

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