1805-1990 MHz, 15 W, 26 V GSM/GSM EDGE, CDMA RF LDMOS Wideband Integrated Power Amplifiers

For best experience this site requires Javascript to be enabled. To enable on your browser, follow our accessibility instructions.

Roll over image to zoom in

The MW6IC2015NBR1 and MW6IC2015GNBR1 wideband integrated circuits are designed for base station applications. They use Our newest High Voltage (26 to 32 Volts) LDMOS IC technology and integrate a multi–stage structure. Their wideband on-chip design make them usable from 1805 to 1990 MHz. The linearity performances cover all modulation formats for cellular applications: GSM, GSM EDGE, PHS, TDMA, CDMA, W–CDMA and TD–SCDMA.

Data Sheet

Application Notes

Documentation

Quick reference to our documentation types.

8 documents

Compact List

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages[AN1907]

PDFMay 13, 2009Rev 3
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages[AN3789]

PDFMar 12, 2009Rev 0
Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages[AN3263]

PDFJun 7, 2006Rev 0
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987[AN1987]

PDFMay 12, 2004Rev 1
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977[AN1977]

PDFOct 9, 2003Rev 0

MW6IC2015NBR1, MW6IC2015GNBR1 1805-1990 MHz, 15 W, 26 V GSM/GSM EDGE, CDMA RF LDMOS Wideband Integrated Power Amplifiers[MW6IC2015N]

PDFDec 29, 2008Rev 3

98ARH99164A, TO-WB, 9.02x23.62x2.59, Pitch 0.04, 17 Pins[SOT1727-1]

PDFFeb 29, 2016Rev R
98ASA10532D, 1329A-04, TO-272WB 16 Lead Gull Wing Plastic[SOT1724-1]

PDFJun 30, 2007Rev F

Design Resources

Design Files

Receive the full breakdown. See the product footprint and more in the eCad file.

1805-1990 MHz, 15 W, 26 V GSM/GSM EDGE, CDMA RF LDMOS Wideband Integrated Power Amplifiers

Documentation

Filter by

Application Note (5)

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages[AN1907]

Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages[AN3789]

Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages[AN3263]

Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987[AN1987]

Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977[AN1977]

Data Sheet (1)

MW6IC2015NBR1, MW6IC2015GNBR1 1805-1990 MHz, 15 W, 26 V GSM/GSM EDGE, CDMA RF LDMOS Wideband Integrated Power Amplifiers[MW6IC2015N]

Package Information (2)

98ARH99164A, TO-WB, 9.02x23.62x2.59, Pitch 0.04, 17 Pins[SOT1727-1]

98ASA10532D, 1329A-04, TO-272WB 16 Lead Gull Wing Plastic[SOT1724-1]

MW6IC2015NBR1, MW6IC2015GNBR1 1805-1990 MHz, 15 W, 26 V GSM/GSM EDGE, CDMA RF LDMOS Wideband Integrated Power Amplifiers

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages

Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages

Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages

Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987

Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977

98ARH99164A, TO-WB, 9.02x23.62x2.59, Pitch 0.04, 17 Pins

98ASA10532D, 1329A-04, TO-272WB 16 Lead Gull Wing Plastic

Design Resources

Design Files

Support

What do you need help with?

Suggested Links